背面熔化对颗粒硅带表面质量的改善  

QUALITY IMPROVEMENT OF SSP MELTED FROM BACKSIDE

作　　者：邹禧武[1] 梁宗存[1] 沈辉[1] 

机构地区：[1]中国科学院广州能源研究所,广州510640

出　　处：《太阳能学报》2005年第2期196-199,共4页Acta Energiae Solaris Sinica

摘　　要：衬底的表面质量对外延薄膜有着显著的影响。为获得高质量的衬底,我们改进了SSP的制备方式。将制备的SSP硅带进行背面熔化后,硅带背面的表面质量得到大幅改善,晶粒明显增大。通过SEM和金相显微镜观察,对两种SSP进行了比较,分析了产生这些变化的原因,并讨论了改进建议。The quality of epitaxial poly-crystalline silicon thin film is affected remarkably by the substrates, To obtain fine substrate, The methods of improving SSP (Silicon Sheet from Powder) is presented. After melting backside of SSP, the surface characteristic of SSP changed obviously and the grain size increases evidently. Through SEM and metallographic microscope observation, the cause of these change has been analyzed and the improve suggestion has been put forward.

关 键 词：背面熔化 颗粒硅带 晶界 

分 类 号：TK514[动力工程及工程热物理—热能工程]