HICUM模型发射极及基极电阻的一种提取方法  

A Method to Extract the Emitter and the Base Resistances in HICUM Model

作　　者：黄家俊[1] 孙玲玲[1] 刘军[1] 

机构地区：[1]杭州电子科技大学CAD所,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2005年第2期5-9,共5页Journal of Hangzhou Dianzi University：Natural Sciences

摘　　要：对现存BJT等效电路模型发射极与基极电阻参数提取方法进行了总结和对比,并针对HICUM模型改进了提取发射极电阻的方法。改进后的方法有效消除了原方法固有的系统误差,并且同时提取了基极电阻。该方法已被成功应用到InGaP/GaAsHBT参数提取中。This paper presents an improved method for extracting the emitter resistance of HICUM model after the analysis and contrasting of the existing BJT equivalent circuit model emitter and base resistances parameters extraction techniques. The improved method effectively eliminates the inherent systematic error of original method, and gets the base resistance simultaneously. This method was successfully applied to InGaP/GaAs HBT parameters extraction.

关 键 词：发射极电阻 基极电阻 双极晶体管模型 参数提取 

分 类 号：TN32[电子电信—物理电子学]