二氧化硅薄膜导热系数试验研究  

Experimental study on thermal conductivity of SiO_2 thin film

作　　者：胡明雨[1] 陈震[1] 杨决宽[1] 庄苹[1] 朱健[2] 陈云飞[1] 

机构地区：[1]东南大学机械工程系,南京210096 [2]中国电子科技集团公司第五十五研究所,南京210092

出　　处：《东南大学学报（自然科学版）》2005年第3期396-399,共4页Journal of Southeast University：Natural Science Edition

基　　金：国家高技术研究发展计划(863计划)资助项目(2003AA404160);国家自然科学基金资助项目(50276011;50275026);江苏省自然科学基金资助项目(BK2002060).

摘　　要：根据3ω方法测试原理,搭建了薄膜导热系数测试平台.在40～170K温度范围内,测试等离子体增强化学气相淀积(PECVD)方法制备的SiO2薄膜导热系数,同时测试了掺杂体态硅基底的导热系数.测试结果表明:在这个温度范围内,SiO2薄膜的导热系数随着温度升高而增大;杂质对体态硅的导热系数存在很大的影响.基于Callaway模型对体态硅导热系数测试结果进行拟合得到的掺杂浓度与实际值吻合较好,表明3ω方法测试原理不仅可以用来测试纳米薄膜的热传导系数,还可用来测定体态硅基底的掺杂浓度.An experimental device was set up based on the principle of 3ω method, and thermal conductivities of doped bulk Si and SiO2 thin film fabricated by plasma enhance chemical vapor deposition (PECVD) were measured with this device. The results indicate that the thermal conductivity of SiO2 thin film increases with the increase of the temperature from 40 to 170 K, and that the impurity has apparent effect on the thermal conductivity of the bulk Si. It is also found that the deduced doping density from the measured thermal conductivity of bulk Si based on Callaway model agrees well with the practical value, which implies that the 3ω method can also be employed to estimate the doping density.

关 键 词：SIO2薄膜 3ω方法 导热系数 

分 类 号：TK124[动力工程及工程热物理—工程热物理] TN304.21[动力工程及工程热物理—热能工程]