隧道再生多有源区垂直腔面发射激光器光学特性研究  

Study on the Optical Characteristics of Tunnel-junction-regenerated Multiple Active Regions Vertical Cavity Surface Emitting Laser

作　　者：渠红伟[1] 郭霞[1] 邓军[1] 董立闽[1] 廉鹏[1] 邹德恕[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京光电子技术实验室北京100022

出　　处：《激光与红外》2005年第4期246-249,共4页Laser & Infrared

基　　金：国家自然科学基金资助项目(NO: 60276033和NO:69889601);国家"863"高技术计划资助项目 (NO:2002AA312070 );国家"973"计划资助项目(NO:G20000683-02 );北京市自然科学基金资助项目(NO: 4021001)。

摘　　要：文章对隧道再生两个有源区内腔接触式垂直腔面发射激光器(VCSEL)光学特进行了研究。主要包括:通过纵向光场分布模拟分析了驻波效应;测量得到了VCSEL外延片量子阱增益谱峰值波长、谐振腔谐振波长、分布布喇格反射器(DBR)反射谱中心波长及材料的生长厚度偏差等重要信息,并结合增益谱,对该外延片制备的器件不激射的原因进行了分析解释。此外,对该外延片边发射模式特性进行模拟计算,由于DBR结构的存在,此结构的光场强度分布明显不同于普通的边发射激光器,模拟得到的远场发散角与测量结果相吻合。The optical characteristics of tunnel-junction-regenerated multiple active regions intracavity-contacted Vertical Cavity Surface Emitting Laser (VCSEL) have been investigated. By the longitudinal optical standing wave field simulated, the standing wave effect is analyzed. The gain peak wavelength, the resonance cavity wavelength, the center wavelength of Distributed Bragg Reflector (DBR) and the thickness deviation of VCSEL are obtained. The reason why the device could not lase is also analyzed and explained using the gain spectrun. Moreover, the edge-emission mode characteristics of intracavity-contacted VCSEL is obtained by simulative calculation. The numerical result shows that the optical field distribution is very different from that of Edge-Emitting Laser due to the DBR structure, and the simulated result of the far field angle is closely accorded with the measured result.

关 键 词：垂直腔面发射激光器 边发射 模式 增益谱 

分 类 号：TN248.4[电子电信—物理电子学]