In Situ Scanning-Tunneling-Microscope Observation on Dissolution of a Cu-20Zr Film  

作　　者：Haibo LU, Guoze MENG, Ying LI and Fuhui WANG State Key Laboratory for Corrosion & Protection, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China 

出　　处：《Journal of Materials Science & Technology》2005年第3期311-314,共4页材料科学技术（英文版）

基　　金：The authors gratefully acknowledge the financial support from the National Natural Science Foundation of China un-der contract No.50001013.

摘　　要：A nanocrystalline coating of Cu-20Zr (in wt pct) was obtained on glass by magnetron sputtering. The corrosion behavior of the Cu-20Zr film in 0.001 mol/L HCI solution was investigated using potentiodynamic polarization and in situ electrochemical scanning-tunneling-microscopy (ECSTM). Results demonstrated that the film exhibits active behavior. Microscopic pitting corrosion and tunneling are caused by localized electrodissolution of Zr atoms and the diffusion of Cu atoms at surface defects.A nanocrystalline coating of Cu-20Zr (in wt pct) was obtained on glass by magnetron sputtering. The corrosion behavior of the Cu-20Zr film in 0.001 mol/L HCI solution was investigated using potentiodynamic polarization and in situ electrochemical scanning-tunneling-microscopy (ECSTM). Results demonstrated that the film exhibits active behavior. Microscopic pitting corrosion and tunneling are caused by localized electrodissolution of Zr atoms and the diffusion of Cu atoms at surface defects.

关 键 词：Magnetron sputtering FILM Potentiodynamic polarization ECSTM 

分 类 号：TB43[一般工业技术]