ICP-AES法测定金属硅中杂质元素  

Determination of impurity elements in silicon metal by ICP-AES

作　　者：成勇[1] 肖军[1] 宁燕平[1] 胡金荣[1] 

机构地区：[1]攀枝花钢铁研究院,四川攀枝花617000

出　　处：《冶金分析》2005年第3期76-79,共4页Metallurgical Analysis

摘　　要：以HF挥发除去基体后,电感耦合等离子体光谱法(ICP-AES)对金属硅中Fe,Al,Ti,Ca,Cu,As,Pb等23个可能共存的杂质元素同时定量测定,并用差减法计算出基体元素硅的含量,只需一次测定即能实现金属硅样品的全分析。试验了共存元素间的干扰影响情况,优选了元素分析谱线和仪器工作参数,运用同步背景校正法、K系数法来消除共存元素间干扰和试液雾化进样的物理化学因素影响。方法简便快捷、易于操作掌握,测定回收率、精密度、检出限均取得了满意结果。The sample was dissolved with HF and the solution was volatilized to eliminate silicon. About 23 co-existing impurity elements in silicon metal including Fe, Al, Ti, Cu, Ca, As, Pb and so on were simultaneously quantitatively determinated by ICP-AES, and then, the content of silicon was calculated by means of subtraction. In a word, only one determination may accomplish total analysis of silicon metal. The interference of co-existing elements has been discussed and eliminated by simultaneous background correction and K correction factor. The operating conditions of the instrument and the analytical spectral lines were optimized. The method was simple, rapid and easy to operate, and so, the recoveries, the RSDs and the detection limits were satisfactory.

关 键 词：ICP-AES 金属硅 杂质元素 全分析 

分 类 号：TG115.3[金属学及工艺—物理冶金]