SiC边界层陶瓷电容器的制备和性能特点  

Investigation on SiC Ceramic Grain Boundary Capacitors

作　　者：秦丹丹[1] 王海龙[1] 辛玲[1] 黎寿山[1] 张锐[1] 高濂[2] 

机构地区：[1]郑州大学材料工程学院,郑州450002 [2]中国科学院上海硅酸盐研究所,上海200050

出　　处：《硅酸盐通报》2005年第3期77-80,共4页Bulletin of the Chinese Ceramic Society

基　　金：河南省杰出青年基金资助(512002200).

摘　　要：陶瓷电容器,尤其是边界层陶瓷电容器由于具有许多优良的性能,而越来越受到人们的重视。通常用于陶瓷电容器的材料是具有弛豫铁电性能的钛酸盐类材料。本文则介绍了将SiC材料用于制备陶瓷电容器,结果发现,电容器的介电常数高达2910000,远远高于传统材料;而同时,其介质损耗也非常高。在此,对降低损耗的工艺过程进行了探讨。The ceramic capacitors, especially for the grain boundary cerami c capacitors, have recently received considerable concern for the unique propertie s.The relaxation materials of titanates are conventionally used as the matrix fo r ceramic capacitors. In this study, the ceramic capacitor of SiC matrix was rev iewed.The result shows that the dielectric constant is up to 2 910 000, which is much higher than that of conventional ceramic capacitors. Nevertheless, very la rge dielectric losses were detected. Several ways were proposed to lower the die lectric losses.

关 键 词：SiC边界层陶瓷电容器 制备方法 钛酸盐类材料 介电常数 

分 类 号：TQ174.756[化学工程—陶瓷工业]