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机构地区:[1]广州师范学院物理系
出 处:《物理学报》1994年第6期1035-1040,T001,共7页Acta Physica Sinica
摘 要:在通常的ZnO-Bi_2O_3-Sb_2O_3系电压敏陶瓷中,加入能构成压敏特性的钡添加剂,发现除已知的Bi_2O_3和Zn_2.33Sb_0.67O_4晶界相以外,还出现新的晶界相,分析表明是固溶有微量其它成分的偏锑酸钡(BaSb_2O_6)晶相。同时还发现,BaSb_2O_6相是热稳定的,它对改善压敏陶瓷的退降性能起重要作用。通过控制各种添加剂的含量,使晶界相Bi_2O_3,Zn_2.33Sb_0.67O_4和BaSb_2O_6之间的数量有适当比例时,压敏陶瓷在长期电负荷作用下和脉冲大电流作用下的抗退降能力都有显著的提高,特别可贵的是反向V—I特性的退阵有很大的改善。Barium additive,which can resutt in a varistor character,was doped in the usualZnO-Bi_2O_3-Sb_2O_3 varistor ceramics. It was found that a new grain boundary phase whi-ch is barium meta antimonate(BaSb_2O_6)crystal phase dissolving other trace compo-sitions was formed besides the known Bi_2O_3 and Zn_2.33Sb_0.67O_4 grain boundary phases.it was also found that the BaSb_2O_6 phase is thermally stable and it plays an impo-rtant role in improving the degradation properties of the varistor ceramics. The anti-degradation abilities of the varistor ceramics under the long duration load voltageand the surge current are both enhanced obviously when the amount of the Bi_2O_3,Zn_2.33Sb_0.67O_4 and BaSb_2O_6 grain boundary phases are in an appropriate ratio by control-ling the amount of various additives.It is particularly valuable that the degradationproperties of the V-I characteristics in backward direction are improved significantly.
分 类 号:TN304.82[电子电信—物理电子学]
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