硅酸钇晶体的生长、腐蚀形貌和光谱性能研究  

Study on the Growth,Etch Morphology and Spectra Property of YSO Crystals

作　　者：庞辉勇[1] 赵广军[1] 介明印[1] 朱江[1] 何晓明[1] 徐军[1] 

机构地区：[1]中国科学院上海光学精密机械研究所

出　　处：《人工晶体学报》2005年第3期421-424,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50402008)资助项目

摘　　要：本文采用中频感应提拉法成功生长了未掺杂的Y2SiO5(YSO)晶体,经过定向、切割、抛光后得到样品。经过腐蚀后,利用大视场显微镜和扫描电镜在样品表面上观察到了菱形和四边形的位错蚀坑、小角晶界和包裹物等缺陷;测试了经过氢气、空气退火前后,辐照前后YSO晶体的透过谱,结果表明:YSO晶体的吸收边大约在202nm,氢气退火后在200～300nm波段透过率增加,空气退火后透过率显著降低;辐照后,氢气退火的样品在200～500nm 波段透过率显著降低。Undoped Y2SiO5 single crystal was grown by the Czochralski method. The samples were prepared by cutting and polishing. The rhombus and quadrangular dislocation etching pits, the low angle boundaries and inclusions in the samples were observed using optical microscope and scanning electron microscope after etching. The transmission spectra were measured before and after H2 annealing or air annealing and before and after radiation. The absorption edge was determined to be about 202 nm. The results show that the transmittance increases after H2 annealing in the 200-300 nm spectral ranges, and obviously decreases after air annealing. The transmittance of the YSO H2-annealed obviously decreases after radiation in the 200-500 nm spectral ranges.

关 键 词：YSO晶体 辐照 光谱 位错蚀坑 小角晶界 

分 类 号：O782[理学—晶体学]