开路p－n结对近邻光电二极管特性的影响  

Influence of an Open Circuit p-n Junction on Characteristics of a Near Photodiode

作　　者：石仲斌 

机构地区：[1]中国舰船研究院微电子技术研究中心

出　　处：《固体电子学研究与进展》1994年第2期186-189,共4页Research & Progress of SSE

摘　　要：对ｐ－ｎ结邻近有大面积受光开路ｐ－ｎ结的光电特性进行了理论和实验分析。结果表明，这种结构不能改善光敏器件的灵敏度和探测率，而且由于大面积受光开路ｐ－ｎ结的存在，器件的灵敏度和探测率比相同面的单个ｐ－ｎ结小。n this paper, photo-electric characteristics of a p-n junction near a large lightreceiving open circuit p-n junction have been studied on theory and experiments. Results show that the construction can not improve sensitivity and detectivity of photosensitive devices, and that the sensitivity and detectivity of the device are lower than that of single p-n junction with the same area as a result of the large photoreceiving open circuit p-n junction.

关 键 词：光电二极管 特性 光敏器件 P-N结 

分 类 号：TN31[电子电信—物理电子学]