多孔硅的微结构和喇曼光谱  

The Microstructure and Raman Spectrum of Porous Silicon

作　　者：汪开源[1] 徐伟弘[1] 毛兆荣 刘柯林[1] 唐洁影[1] 

机构地区：[1]东南大学电子工程系

出　　处：《固体电子学研究与进展》1994年第2期147-150,共4页Research & Progress of SSE

摘　　要：多孔硅（ＰｏｒｏｕｓＳｉｌｉｃｏｎ）是晶体硅于氢氟酸溶液中在硅衬底上形成的多孔态的硅材料。ＰＳ可见光区的强烈光辐射使其成为世界范围的研究焦点。本文用电化学方法制得了ＰＳ结构，扫描电子显微镜（ＳＥＭ）的结果表明ＰＳ是一个硅的毫微结构量子线的网络，光致发光（ＰＬ）谱表明ＰＳ发可见红光，而喇曼光谱显示一个在５１６ｃｍ（－１）附近的非对称峰，说明ＰＳ是一种新型的硅材料。Porous Silicon (PS)is a porous morpholgical form of silicon formed on the crystalline Si substrate by anodization in HF solution. The intensively visible lightemission from PS layer made it becoming the world-wide research point. In this paper,we review what we have done about the PS. Using electrochemical dissolution,we have obtained the PS structure. The result of SEM showed that PS is a quantum wire network of Si nanostructure,PL spectrum showed that PS emits visible red light, and the Raman spectrum indicated an asymmetric peak near 516 cm(-1). This means PS is a new type material of Si.

关 键 词：多孔硅 喇曼光谱 微结构 硅 

分 类 号：TN304.12[电子电信—物理电子学]