单电子器件  

Single-Electron Devices

作　　者：顾宁[1] 鲁武 陆祖宏[1] 沈浩瀛[1] 

机构地区：[1]东南大学,南京电子器件研究所

出　　处：《固体电子学研究与进展》1994年第3期197-204,共8页Research & Progress of SSE

摘　　要：单电子器件作为新一代器件──量子效应器件中的重要一类，其研究工作已愈来愈被人们重视。本文对这一工作进行了较全面的回顾，同时也讨论了库仑抑制等基本效应，这是此类器件的设计基础。分析了制备单电子器件的关键技术，并简要介绍了器件的潜在应用前景及目前的研制动态。Extensive attention is recently paid to the research work on the single-electron devices (SED),which comprised in quantum devices have been considered as a new generation of devices. This paper looks back to the studied history of the SEDs briefly and discusses some effects, such as coulomb blockade, which are basic of SED design.Finally we point out the key technology for fabrication of this device structure and show their potential application in the future.

关 键 词：单电子器件 库仑抑制 量子效应器件 

分 类 号：TN6[电子电信—电路与系统]