PtSi／p－Si肖特基势垒红外探测器的研制  

Study and Manufacture of PtSi/p-Si Infrared Schottky Barrier Detector

作　　者：李国正[1] 李道全[1] 刘恩科[1] 张浩[1] 

机构地区：[1]西安交通大学电子工程系

出　　处：《固体电子学研究与进展》1994年第4期342-346,共5页Research & Progress of SSE

基　　金：国家863课题

摘　　要：介绍了ＰｔＳｉ／ｐ－Ｓｉ肖特基势垒红外探测器（简称ＩＲ－ＳＢＤ）的优化结构及探测机理，给出了探测器的光增益模型，并对器件进行了制作及性能测试。器件在７７Ｋ下，反偏４Ｖ时的反向漏电流为５×１０（－６）μＡ，对１．５２μｍ红外光的灵敏度为２．６９×１０（－２）Ａ／Ｗ，量子效率为２．４％。Detecting principle and optimized structure of PtSi/p-Si infrared Schottky barrier detector(IR-SBD) are described in this paper. Photoyield model of the detector is given. The manufacture and characteristic test of the IR-SBD are also successfully carried out. Under the temperature of 77 K, the reverse leakage current of the IR-SBD is 5× 10(-6) μA at reverse bias voltage of 4 V. The responsibility is 2. 69×10(-2) A/W and quantum efficiency is 2. 4% for the infrared light wavelength of 1. 52μm.

关 键 词：PTSI IR-SBD 红外探测器 

分 类 号：TN216[电子电信—物理电子学] TN386.3