硅基LiNbO_3薄膜的微结构研究  

Microstructure of LiNbO_3 Thin Films Grown on Silicon Substrates by Pulsed Laser Deposition

作　　者：卢焕明[1] 叶志镇[1] 黄靖云[1] 汪雷[1] 赵炳辉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《无机材料学报》2005年第4期971-975,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金重大研究计划(90101009)浙江省留学回国基金(20046)

摘　　要：利用透射电子显微镜及X射线衍射,研究脉冲激光沉积技术(PLD)在Si(001)衬底上生长LiNbO3薄膜的微结构.结果表明,在600℃的衬底温度、30Pa的氧分压条件下,在硅片表面5nm厚的非晶氧化层上生长的薄膜,为c轴择优取向的单相LiNbO3晶体.本文还讨论了获得c轴择优取向LiNbO3薄膜的生长机理.A lithium niobate (LiNbO3) thin film was fabricated by a pulsed laser deposition method on Si(001) substrate with about 5nm-thick amorphous silicon oxide surface layer, under the conditions of 600 degrees C substrate temperature and 30 Pa oxygen pressure. The film was investigated by transmission electron microscope and X-ray diffraction. The factors influencing on the evolution and preferred orientation of the LiNbO3 were discussed. The results obtained show that the LiNbO3 thin film is highly c-axis oriented perpendicularly to the substrate under the optimized deposition conditions above mentioned.

关 键 词：LiNbO3薄膜 透射电子显微镜 PLD技术 

分 类 号：TN304[电子电信—物理电子学]