BSTO/Mg_2SiO_4/MgO复合材料的介电性能研究  

Dielectric Properties of BSTO/Mg_2SiO_4/MgO Ceramic Composites

作　　者：陈莹[1] 董显林[1] 高敏[1] 梁瑞虹[1] 曹菲[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050

出　　处：《无机材料学报》2005年第4期1013-1018,共6页Journal of Inorganic Materials

基　　金：中国科学院创新基金(1730300400009)

摘　　要：采用传统的电子陶瓷制备工艺制备了BSTO/Mg2SiO4/MgO复合材料,并对样品的结构及其介电性能进行了表征与分析,讨论了Mg2SiO4/MgO掺杂对BSTO/Mg2SiO4/MgO复合材料结构和性能的影响.结果表明,与前其他掺杂改性的BSTO复合材料相比,BSTO/Mg2SiO4/MgO 复合材料不仅可以在较低的温度烧结致密,而且在介电常数降低的同时,仍能保持较高的可调性,如BSTO/39wt%Mg2SiO4/17wt%MgO的介电常数εr为-80.21,在2kV/mm的直流偏置电场下,其可调性达到-12%,介电损耗为-0.003.BSTO/Mg2SiO4/MgO ceramic composites were fabricated by conventional ceramic processing. The microstructures and dielectric properties of the samples were measured and investigated systemically. The effects of the doping Of Mg2SiO4/MgO on the microstructures and dielectric properties of BSTO/Mg2SiO4/MgO ceramic composites were investigated. The results show that compared with the other BSTO ceramic composites, BSTO/Mg2SiO4/MgO ceramic composites not only can be sintered at a lower temperature but also keep a higher tunability while the dielectric constant decreases. The typical composition of BSTO/39wt/% Mg2SiO4/17wt% MgO has a dielectric constant of similar to 80.21, a dielectric loss of similar to 0.003 and a tunability of similar to 12% under applying 2kV/mm dc bias field.

关 键 词：钛酸锶钡 复合材料 介电性能 可调性 

分 类 号：TM22[一般工业技术—材料科学与工程] TB33[电气工程—电工理论与新技术]