ZnO纳米线阵列的侧面生长机理  

Lateral growth mechanism of nanowire arrays of ZnO

作　　者：施书哲[1] 徐明[1] 黄礼胜[1] 刘云飞[1] 卢都友[1] 吕忆农[1] 

机构地区：[1]南京工业大学材料科学与工程学院,江苏南京210009

出　　处：《电子显微学报》2005年第3期196-200,共5页Journal of Chinese Electron Microscopy Society

摘　　要：通过一种简单的无催化剂存在的气相生长工艺制备了侧面长成梳状结构的ZnO纳米线阵列。沿[0001]方向生长的ZnO纳米线按照100～500nm的间隔有规律地排列在梳底一侧。单晶梳底沿着[2110]方向生长到±(0110)和±(0001)面终止。所得均一纳米线的直径和长度分别为40～100nm和0.5～2.0μm。纳米线阵列的侧面生长成为微米梳,是气体分子自组装成纳米线和一步法组装成微米结构的重要例子。本文详细讨论了ZnO纳米线阵列生长成为微米梳的生长机理。Anisotropic growth of nanowire arrays into comb-like microstructures of ZnO has been developed by a simple catalyst-free vapor growth process. The [0001]-orientated ZnO nanowires laterally arrayed on one side of the comb base with regular periodicities of 100-500 nm. The bases with single crystalline nature grew along [2(1) (1)0] and terminated in ±(01(1)0)and ±(0001). The diameters and length of the uniform nanowires were about 40～100 nm and 0.5～2.0 μm, respectively. The lateral growth of nanowire arrays into micro-scale combs represented an important example of self-organization of vapor molecular species into nano-scale wires and their micro-scale assemblies in one step. Detailed growth mechanisms of the ZnO nanowire arrays into microcombs were discussed.

关 键 词：纳米结构 氧化物 半导体材料 气相生长工艺 

分 类 号：TB383[一般工业技术—材料科学与工程]