直流偏场和面内场联合作用下第Ⅰ类哑铃畴壁内VBLs的稳定性  

Stability of First Kind of Dumbbell Domains Subjected to an In-plane Field at Different Bias Fields

作　　者：王丽娜[1] 吴佺[1] 聂向富[1] 郭革新[1] 

机构地区：[1]河北师范大学物理学院,河北石家庄050016

出　　处：《河北师范大学学报（自然科学版）》2005年第4期354-356,共3页Journal of Hebei Normal University：Natural Science

基　　金：国家自然科学基金资助项目(10274018)

摘　　要：研究了直流偏场和面内场联合作用下,液相外延石榴石磁泡膜中第Ⅰ类哑铃畴(ID)畴壁中垂直布洛赫线(VBL)的稳定性.发现,室温时在Hb和Hip的共同作用下,当Hb>H′sb时,ID的剩余率将在某一面内场Hip下迅速下降,即ID畴壁内VBL在某一Hip迅速丢失.随着Hb上升这种下降的趋势越容易发生,并变得更剧烈.通过观察证实,这种下降的趋势与ID的自收缩有关.由此可知,在Hip和Hb的共同作用下ID畴壁中的VBLs丢失的过程中,自收缩起着重要的作用.The softening process of the first kind of dumbbell domains (IDs) in garnet bubble films subjected to an in-plane field H_(ip) at different static bias field H_b was studied experimentally.It found that when H_b is larger,the remaining percentage of ID,R_(ID),drops sharply at a certain H_(ip),and with the increase of H_b the drop occurs at lower H_(ip) and becomes more intensive.It has been confirmed that this related to the 'spontaneous-shrink' of IDs,which plays an important role in the breakdown of vertical Bloch line chains of IDs subjected to joint fields H_b and H_(ip).

关 键 词：垂直布洛赫线 第Ⅰ类哑铃畴 直流偏场 面内场 

分 类 号：O484.1[理学—固体物理]