热处理工艺对合金薄膜电阻及其稳定性的影响  

Effects of heat treatment process on alloy thin film resistance and its stability

作　　者：彭银桥[1] 甘元驹[1] 

机构地区：[1]湛江海洋大学信息学院,广东湛江524088

出　　处：《传感器技术》2005年第7期27-28,31,共3页Journal of Transducer Technology

基　　金：国家自然科学基金资助项目(69971007;69890227)

摘　　要：利用离子束溅射镀膜技术,在17-4PH不锈钢弹性衬底上直接溅射SiO2绝缘膜和NiCr薄膜,制备了一种新型的压力传感器用合金薄膜。分析了热处理工艺对合金薄膜电阻稳定性的影响,对NiCr薄膜电阻进行了4种热处理工艺,获得了使合金薄膜电阻长期稳定的热处理工艺参数在SiOx和N2的保护下,673K退火1h,并在473K下保温24h。用该工艺能制备适应各种恶劣环境的高精度压力传感器。Alloy thin film for advanced pressure sensors is manufactured by means of ion-beam sputtering SiO_2 insulation film and NiCr thin film on the 17-4PH stainless steel elastic substrate.The effects on stability of thin film alloy resistance are thoroughly analyzed.The NiCr thin film resistance is respectively heat-treated by four processes,and paramaters of heat treatment that make thin film resistance stable are obtained.The thin film resistance is heat-treated under protection of SiO_x and N_2 at 673K for 1h,then it is kept at 473K for 24h.Pressure sensors of high precision for harsh environments can be manufactured by this process.

关 键 词：薄膜合金电阻 压力传感器 热处理 稳定性 

分 类 号：TG154.5[金属学及工艺—热处理] TG146[金属学及工艺—金属学]