High Performance P-Channel Schottky Barrier MOSFETs with Self-Aligned PtSi Source／Drain on Thin Film SOI Substrate  

作　　者：竺士炀 李名复 

机构地区：[1]DepartmentofMicroelectronics,FudanUniversity,Shanghai200433//SiliconNanoDeviceLaboratory,DepartmentofElectricMandComputerEngineering,NationalUniversityofSingapore,Singapore,119260 [2]SiliconNanoDeviceLaboratory,DepartmentofElectricMandComputerEngineering,NationalUniversityofSingapore,Singapore,119260

出　　处：《Chinese Physics Letters》2005年第8期2020-2022,共3页中国物理快报（英文版）

分 类 号：TN31[电子电信—物理电子学]