碳化硅表面钡铁氧体薄膜制备与吸波性能  

Preparation and Microwave Absorptivity of BaFe_(12)O_(19)-encapsulated SiC Particles

作　　者：张晏清[1] 张雄[1] 

机构地区：[1]同济大学材料科学与工程学院,上海200092

出　　处：《材料导报》2005年第6期120-122,共3页Materials Reports

基　　金：上海市科委纳米项目(0352nm041);高等学校博士学科点专项科研基金项目(20030247035)

摘　　要：采用柠檬酸盐溶胶-凝胶法在碳化硅表面形成钡铁氧体薄膜。XRD 表明生成的铁氧体为六角磁铅型晶体BaFe_(12)O_(19)。测定了材料在0.1～6.0 GHz 内的介电常数与磁导率。与单纯钡铁氧体比较,碳化硅表面沉积钡铁氧体薄层后复合相吸波频段宽化,吸波能力增强。BaFe_(12)O__(19)-encapsulated SiC powders are prepared with citrate sol-gel method.It is observed that the BaFe_(12)O_(19) crystal firm grows on SiC grain surface.The complex permittivity and permeability of ferrite are measured by a network analyzer in the frequency range of 0.1～6.0GHz.It is found that the microwave absorptivity of BaFe_(12)O_(19)-encapsulated SiC pow- ders is better than that of pure BaFe_(12)O_(19) powders.

关 键 词：吸波性能 薄膜制备 硅表面 BAFE12O19 钡铁氧体薄膜 溶胶一凝胶法 柠檬酸盐 介电常数 表面沉积 XRD 磁导率 复合相 碳化硅 

分 类 号：TM25[一般工业技术—材料科学与工程] O484.1[电气工程—电工理论与新技术]