掺杂对钛酸锶压敏陶瓷性能的影响  

EFFECT OF DOPING ON THE PROPERTIES OF SrTiO_3 VARISTOR CERAMICS

作　　者：王静[1] 甘国友[1] 严继康[1] 白桂丽[1] 郭中正[1] 

机构地区：[1]昆明理工大学材料与冶金工程学院,650093

出　　处：《陶瓷学报》2005年第2期80-83,共4页Journal of Ceramics

基　　金：云南省科技攻关项目(编号:20029909)

摘　　要：研究了施主掺杂和受主掺杂对SrTiO3压敏陶瓷材料微观结构和电性能的作用。研究结果表明,La、Nb进行双施主掺杂时按一定比例能获得较低的压敏电压;以La进行单施主掺杂,含量为1.2mol%时,压敏电压最低。双施主掺杂的压敏电压要高于单施主的电压。以CuO进行受主掺杂的效果要好于以MnCO3进行受主掺杂的效果。The effect of donor and acceptor doping on the microstructure and electrical property of SrTiO3 ceramic varistor material was studied. When doped with two donors of La and Cu in stated proportion, the sensing-voltage is relatively low; When doped with a single donor of La of 1.2mol%, the sensing-voltage is low. The sensitive-voltage of the material doped with two donors is higher than with a single donor. When CuO and MnCO3 are used as acceptors, the effect of doped CuO is better.

关 键 词：陶瓷性能 钛酸锶 双施主掺杂 压敏陶瓷材料 SRTIO3 受主掺杂 压敏电压 微观结构 研究结果 电性能 CUO La 

分 类 号：TQ174.764[化学工程—陶瓷工业] TQ174.756[化学工程—硅酸盐工业]