PIN结构自扫描光电二极管列阵的理论分析及实验研究  

Theoretical Analysis and Experimental Research of Self-Scanned Photodiode Array with PIN Structure

作　　者：黄友怒[1] 朱维安[1] 何清义[1] 吕果林[1] 林鹏[1] 

机构地区：[1]重庆大学光机所

出　　处：《重庆大学学报（自然科学版）》1995年第6期39-45,共7页Journal of Chongqing University

基　　金：国家自然科学基金

摘　　要：提出了用ＰＩＮ结构代替通用的ＰＮ结结构组成自扫描光电二极管列阵（ＳＳＰＡ）的构想，并从理论上推导了再充电采样的ＳＳＰＡ性能参数的一般表达式。由此推断出ＰＩＮ结构ＳＳＰＡ具有高响应度高分辨率的特点。实验上制备出了不同光敏面积的ＰＩＮ结构ＳＳＰＡ，并和相同面积的ＰＮ结结构ＳＳＰＡ比较。结果表明前者优于后者，与理论预期相一致。This paper proposes a new idea that Self-scanned Photodiode Array(SSPA)withthe common PN structure is replaced by the PIN structure.Theoretically,the general formulae of theproperties of recharged sampled mode SSPA are analysed in detail and a con clusion is drawn thatSSPA with PIN structure has the properties of higher responsibility and higher resolution,We com-pare its properties with those of SSPA with PN structure of equal area photosensitive cell.The resultshows that the former one has higher resposibility and the other parameter features are superior tothe latter.The experimental results are consistent with the theory.The new type of imaging sensorwith PIN structure can be widely used in the field of high speed data record,high resolving and dimlight detection ect.

关 键 词：传感器 列阵 光电二极管 PIN结构 

分 类 号：TN364.2[电子电信—物理电子学]