多孔硅发光器件的设计与试验  

Design and Experiment of Porous Silicon Light Emitting Device

作　　者：唐洁影[1] 汪开源[1] 

机构地区：[1]东南大学电子工程系

出　　处：《固体电子学研究与进展》1995年第4期352-355,共4页Research & Progress of SSE

摘　　要：设计了多孔硅电致发光器件，讨论了工艺条件对器件Ｉ—Ｖ特性影响。试验中已观察到微弱的电致发光。认为利用多孔硅制备可见光发光器件是可行的。A porous silicon (PS) light emitting device has been designed,and the influence of fabricating technique on its I-V characteristic is discussed. A faint electroluminescence phenomenon has also been observed. Experimental results show that visible light emitting device fabricated by PS is feasible.

关 键 词：多孔硅 发光器件 

分 类 号：TN383[电子电信—物理电子学]