8mm　GaAs　Gunn稳态功率放大器  

Ka-Band GaAs Gunn Stable Power Amplifiers

作　　者：黄振起[1] 冯委[1] 

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》1995年第4期335-340,共6页Research & Progress of SSE

摘　　要：报导了以商用ＧａＡｓＧｕｎｎ氏振荡管（超临界掺杂Ｇｕｎｎ二极管）研制稳态型功率放大器的设计方法和研制结果。提出了放大器宽温不稳定的解决方法。单管单级放大器，增益大于１０ｄＢ，带宽大于２ＧＨｚ（３３～３５ＧＨｚ），最大输出功率２００ｍｗ，能在－４０～＋５５℃内稳定工作，全温增益变化小于０．５ｄＢ，带内波纹小于０．５ｄＢ。可靠性高。This paper describes a design approach and results of stable power amplifiers constructed with commercial GaAs Gunn Diodes (Supercritical doping Gunn diodes) used for oscillating. A new method to resolve the unstability of the amplifiers in wide temperature range has been developed. A single stage amplifier with single diode achieved more than 10 dB of power gain, 2 GHz of bandwidth with 0. 5 dB ripple and 200 mW of output power. It can be operated stably and has only 0. 5 dB variatian of power gain in the whole temperature range of -40 to +55 ℃.

关 键 词：毫米波 体效应 稳态功放 功率放大器 

分 类 号：TN722.75[电子电信—电路与系统]