Cd_6Sb_2O_(10)半导瓷的结构分析  

The Structive Analysis of Cd6Sb2O10 Semiconductive Ceramics

作　　者：张靖漓[1] 

机构地区：[1]华中理工大学固体电子学系

出　　处：《压电与声光》1989年第1期22-24,共3页Piezoelectrics & Acoustooptics

摘　　要：本文报道了对一种新合成的半导体陶瓷Cd_6Sb_2O_(10)进行X射线衍射分析的实验结果。利用图解法和解析法对衍射数据进行了分析和探讨。结果表明,Cd_6Sb_2O_(10)属于四方晶系,晶格常数a=0.9775nm,c=0.8798nm。The XRD data of a new synthesized semiconductive ceramics aie reported. The analysis and research of XRD data are carried out by means of graphical and numerical methods. The results show that CdeSb2O10 ceramics belong in tetragonal system and the lattice parameters are a = 0.9775nm and c = 0.8798nm.

关 键 词：半导体陶瓷 Cd6Sb2O10 X射线衍射 

分 类 号：TN304.82[电子电信—物理电子学]