Bi_2Sr_（1．8）La_（0．2）Cu_（1－x）MxOy（M＝Ni，Z  

THE STUDY OF MICROSTRUCTURE IN Bi_2Sr_(1.8)La_(0.2)Cu_(1-x)MxOy(M=Ni,Zn)

作　　者：许存义[1] 毛志强[1] 左健[1] 王跃 张裕恒 

机构地区：[1]中国科学技术大学结构分析开放研究实验室

出　　处：《低温物理学报》1995年第5期365-368,共4页Low Temperature Physical Letters

摘　　要：本文利用Ｘ射线衍射、电子衍射和拉曼散射对Ｂｉ２Ｓｒ１．８Ｌａ０．２ＣＵ１－ｘＭｘＯｙ（Ｍ＝Ｎｉ，Ｚｎ）体系的微结构进行了研究．实验表明，随着掺杂量的增加，掺Ｚｎ体系的结构畸变明显大于掺Ｎｉ体系的结构畸变．由此看来，非磁性杂质Ｚｎ之所以比磁性杂质Ｎｉ对Ｔｃ具有更大的抑制作用，应该归因于Ｚｎ掺杂造成材料中严重的结构畸变．Abstract The microstructure of Bi2Sr1.8La0.2Cu1-xMxOy(M=Ni,Zn)isinvestigated by means of Xray diffraction, electron diffraction and Raman scattering in this article.The experimental data show that the degree of the structure distortion caused by the Zn-doping in the 2201.phase is much lager than caused by the Ni-doping with increasing dopant concentration.This suggests that the reason why the Zn-doping supresses Tc much stronger than the Ni-doping comes from the serious structure distortion caused by the Zn-doping in the material.

关 键 词：BSLC 超导体 高TC 微结构 

分 类 号：TM263[一般工业技术—材料科学与工程] O511.2[电气工程—电工理论与新技术]