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作 者:侯承贵[1]
机构地区:[1]河北大学
出 处:《电工技术学报》1995年第4期75-78,共4页Transactions of China Electrotechnical Society
摘 要:本文提出一种能改善小信号转换精度的CMOS全波整流电路。该电路通过对执行电压-电流转换任务的P-MOS和N-MOS晶体管施加偏置电压,且偏压数值近似等于各管的阈电压VTP和VTN,从而克服了CMOS整流中"死区"较大和阈电压失配造成的影响。模拟电路的测量结果表明,该电路对0.1mV级的输入信号也有线性度极好的转换特性。This paper presents a CMOS full-wave rectifying circuit which can improve the converting precision for small signals.In the circuit.the biases are applied to the N-MOS and P-MOS transistors, which implement voltage-current conversion, and the values of the biases are approximately egual to the threshold VTN and VTP of each transistor.Therefore,the effects of the larger 'die zone' and the mismatch of the threshold can be overcome in the CMOS rectification.The experimental results of modeling circuit show that the proposed circuit has a excellent transfering charecteristic for small signals even at 0.1mV level of input magnitude.
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