用逐层淀积法制备a－Si∶H薄膜  

a-Si:H Thin Films Prepared by Layer-by-Layer Deposition

作　　者：潘广勤[1] 廖显伯[1] 王燕[1] 刁宏伟[1] 孔光临[1] 

机构地区：[1]中国科学院半导体研究所,中国科学院表面物理国家重点实验室

出　　处：《电子学报》1995年第5期77-79,共3页Acta Electronica Sinica

基　　金：国家自然科学基金

摘　　要：本文用逐层淀积法制备了ａ－Ｓｉ：Ｈ薄膜，研究了生长速率、子层厚度及氢等离子体处理对薄膜性质的影响，结果指出：不同条件下的氢等离子体处理不仅可以使淀积的样品发生从非晶到微晶的相变，而且可以使费米能级的位置向上或者向下移动，在较低的淀积速率及较小的子层厚度下淀积，并配合以适度的氢等离子体处理，可以得到具有较高光电灵敏度及稳定性的ａ－Ｓｉ：Ｈ薄膜。We report a-Si:H thin films prepared by layer-by-layer deposition. The influences of deposition rate,sublayer thickness and H-plasma treatment of film properties were studied. Our results indicate that H-plasma treatment can induce the samples changing from amorphous to microcrystalline phase ,and also shift the Fermi energy level upwards or downwards,depending on the deposition and H-plasma treatment conditions.a-Si: H with higher photosensitivity and stability can be obtained under lower deposrtion rate and smaller sublayer thickness combining with suitable H-plasma treatment.

关 键 词：氢等离子体处理 稳定性 薄膜 

分 类 号：TN304.055[电子电信—物理电子学]