分布电容对CCII　MOSFET－C集成连续时间带通滤波器的影响  

Effects of Distributed capacitance on CCII Based MOSFET-C Integrated Continuous-Time Bandpass Filter

作　　者：陈莉[1] 邱关源[1] 

机构地区：[1]西安交通大学电气系

出　　处：《电子学报》1995年第8期83-85,共3页Acta Electronica Sinica

基　　金：国家自然科学基金

摘　　要：本文用极点分析方法详细地探讨了在高频工作下的ＣＣＩＩＭＯＳＦＥＴ－Ｃ连续时间带通滤波器，从极点位移直观地反映了ＭＯＳＦＥＴ分布电容及非理想ＣＣＩＩ对主极点频率ωｐ和品质因数Ｑｐ的影响．还用计算机模拟进行了验证。This paper considers in detail the response of CCII based MOSFET-C continuoustime bandpass filter at high frequencies using the pole analysis.The dominant pole deviation reflects directly the effects of distributed capacitance of the MOSFETs and the nonideality of CCII on the dominant pole frequency ωp and quality factor Qp.The analyses are verified with computer simulation.

关 键 词：电流传输器 集成滤波器 高频效应 MOSFET 

分 类 号：TN713.7[电子电信—电路与系统]