半磁半导体Zn_（1－x）Mn_xS中的能量传递  

ENERGY TRANSFER IN THE SEMIMAGNETIC SEMICONDUCTERS Zn_(1-x)Mn_xS

作　　者：王敬伯[1] Hoffma.H 

机构地区：[1]中国科学院长春物理研究所

出　　处：《发光学报》1995年第1期38-43,共6页Chinese Journal of Luminescence

基　　金：中国科学院长春物理所激发态物理开放研究实验室资助

摘　　要：本文测量了Ｚｎ１－ｘＭｎｘＳ在不同Ｍｎ浓度（０．００１＜ｘ＜０．５）下的发射谱和衰减曲线，并且用Ｙｏｋｏｔａ和Ｔａｎｉｍｏｔｏ模型进行了分析在对４Ｔ１衰减曲线进行拟合时发现衰减曲线是两种不同弛豫过程之和：（１）孤立的Ｍｎ２－离子的４Ｔ１衰减，它确定衰减曲线的尾部，有较长的衰减寿命；（２）Ｍｎ２－离子聚集体（例如Ｍｎ２－离子对）的４Ｔ１衰减，这种衰减比单个Ｍｎ２－离子的衰减更快．我们深入分析了在ｘ＝０．０６２，Ｔ＝８０Ｋ时的Ｚｎ１－ｘＭｎｘＳ的发射谱及其衰减曲线，得到两个衰减寿命：τ１＝７０μｓ，τ２＞１０００μｓ，这表明在高Ｍｎ浓度时存在着两个弛豫过程：一个是较快的，另一个则是较慢的，根据Ｇｏｅｄｅ等人的实验结果可以断定较慢的过程来自孤立的Ｍｎ２－离子，那么便可以判知较快的过程是来源于Ｍｎ２－离子对．正是高Ｍｎ浓度下的Ｚｎ１－ｘＭｎｘＳ中存在着Ｍｎ２＋－Ｍｎ２＋离子对，在其间有能量迁移以及它和能量受主之间的能量传递造成了该体系中的ＩＲ发射．s an important material of optoelectronic devices,many questions about the luminescence of Zn1-xMnxS had been researched clearly.The origin of additional emission bands,however, which appears in Zn1-xMnxS only at higher amount of Mn(x≥0.01)are not yet fully explained.To counter this question,the emission spectra and decay curve of Zn1-xMnxS at different concentrations of Mn(0.000<x<0.5)were measured and analyzed by the model of Yokota and Tanimoto.While fitting the decay curve of 4T1 we notice that the decay must be considered as sum of two different kinds of relaxation process:The 4T1 (G) decay of Mn2+ ions determines the tail of the decay curve as these states have a rather long lifetime.The 4T1(G)decay of Mn2+ tupels(i.e.pairs of Mn2+ions)is much faster than that of single Mn2+ state.We have analyzed deeply the emission spectra and its decay curve of Zn1-xMnxS at x=0.062,T=80K,got two lifetimes:τ=70μs,τ2=≥1000μs. The results indicate that there are two kinds of relaxation process at high concentration of Mn,one is faster, another is slower. According to the experiment result of Goede et al.we may conclude the slower precess comes from isolated Mn2+ ions,then we may deduce there are the pairs of Mn2+-Mn2+ in Zn1-xMnxS at higher concentration of Mn and they cause the IR emission and in this system.

关 键 词：半磁半导体 能量传递 红外发射 ZnMnS 

分 类 号：TN304.7[电子电信—物理电子学]