塞曼石墨炉平台原子化直接测定砷化镓中掺杂铟量  

Direct Determination of Doping Indiumin Gallium Arsenide by zeeman GFAAS andL'vov Platform Technique

作　　者：蔡绍勤[1] 潘书慧 张楠[1] 

机构地区：[1]北京有色金属研究总院分析测试技术研究所

出　　处：《分析试验室》1995年第4期1-4,共4页Chinese Journal of Analysis Laboratory

摘　　要：本文采用石墨平台原子化、Ｚｅｅｍａｎ背景校正，研究砷化镓掺杂Ｉｎ的原子吸收特性。提出一种简便、灵敏直接测定砷化镓薄片中痕量Ｉｈ的方法。检测了砷化镓掺杂Ｉｎ量并考查其分布规律。n this paper,the atomic absorptionCharacteristics of indium in GaAs was stud-ied by Zeeman GFAAS and L'vov platformtechnique,A simple and sensitive method isproposed for the determination of trace indi-um in GaAs,The method has been used forthe direct determination of doping indium inthin piece of GaAs and can provide the indi-um profile in GaAs.

关 键 词：塞曼石墨炉 铟 砷化镓 原子吸收法 

分 类 号：O614.37[理学—无机化学] O657.31[理学—化学]