集成差分式PH-ISFET的研究  

The Study on An Integrated Differential PH-ISFET

作　　者：邵丙铣[1] 张永夏[1] 邵红霖 金曼娜[1] 

机构地区：[1]复旦大学

出　　处：《仪器仪表学报》1989年第3期225-228,共4页Chinese Journal of Scientific Instrument

摘　　要：本文扼要地叙述了集成差分式氢离子敏感器的原理、制备和特性。由于具有温度补偿作用的M OSFET 与ISFET 集成在同一芯片上,显著地降低了共模噪声和温度的影响,并保持了良好的灵敏度、线性和选择性等性能指标。The principle,fabrication and performances of the integrateddifferential H^+-ion sensor have briefly been diseribed.The common modenoises and temperature effects have significantly been reduced by usingthe integrated temperature compensation MOSFET and ISFET on one chip,in addition to good sensitivity,linearity,and selectivity.

关 键 词：差分式 离子敏感器 氢 ISFET 集成 

分 类 号：TN379[电子电信—物理电子学]