PIN结构自扫描光电二极管列阵的研究  

Study of Self-Scanning Photodiode Array with PIN Structure

作　　者：黄友恕[1] 何清义[1] 朱维安[1] 吕果林[1] 

机构地区：[1]国家教委光电技术与系统开放实验室,重庆大学

出　　处：《光电工程》1995年第4期17-23,共7页Opto-Electronic Engineering

基　　金：国家自然科学基金

摘　　要：通过对再充电采样方式的自扫描光电二极管列阵（ＳＳＰＡ）工作原理分析，对列阵中光电二极管工作模式进行较深入的探讨，指出影响其性能的主要因素。提出了用ＰＩＮ结构代替常用的ＰＮ结结构的光电二极管组成ＳＳＰＡ。经过ＰＩＮ结构和ＭＯＳ电路兼容工艺方案的分析及实验，测试结果表明ＰＩＮ结构有利于改进ＳＳＰＡ的性能，是研究高性能ＳＳＰＡ的新结构。The operating mode of photodiode is deeply investigated through the principle analysing for Self-Scanning Photodiode Array(SSPA) with recharging sampling mode. The main factors effecting its performances are pointed out.We propose to form self-scanning photodiode array with PIN structure photodiodes replacing PN structure photodiodes.With the analysing and experimenting of PIN structure and MOS circuit compatible technology.the testing results show that PIN structure is beneficial to improving SSPA performances and is a new sturcture for studying high performance SSPA.

关 键 词：光电二极管阵列 PIN二极管 自扫描 结构 

分 类 号：TN364.2[电子电信—物理电子学]