一种确定MESFET噪声参量的新方法  

A NEW METHOD FOR CALCULATING THE NOISE PARAMETERS OF MESFET

作　　者：蔡纯青[1] 蔡树榛[1] 阮一刚 王建伟[1] 

机构地区：[1]复旦大学

出　　处：《应用科学学报》1989年第3期219-224,共6页Journal of Applied Sciences

摘　　要：本文提出了一种确定MESFET噪声参量的新方法.该法不仅能单独从MESFET结构参量或S参数实测值出发计算噪声参量;而且能同时利用结构参量及S参数实测值,通过优化,得出更精确的噪声参量.In this paper a new method for calculating the noise parameters of MESFETis presented. Using this method, noise parameters can be calculated noti only from structure parameters or S parameters of MESFET separately, but also from the structurc parameters and S parameters simultaneously. This method possesses higher precision than those methods in common use. In this method noise parameters are calculated by using the rigorous network theory and lead inductances are included in the equivalent circuit of MESFET, so this method can be used up to a higher frequency range than Fukui's. Program MESNOC realizes these ideas. It is very useful for research and development of new device as only the nodes of the equivalent circuit and the values of the elements are required when unning MESNOC. The values of minimum noise figure calculated by using MESNOC agree with the values measured.

关 键 词：MESFET结构 参数 噪声 计算法 

分 类 号：TB53[理学—物理]