半绝缘砷化镓单晶中AB微缺陷的定量研究  

QUANTITATIVE STUDY OF AB MICROSCOPIC DEFECTS IN SEMI-INSULATING GaAs SINGLE CRYSTALS

作　　者：齐芸馨[1] 姜春香[1] 

机构地区：[1]电子工业部第四十六研究所

出　　处：《兵器材料科学与工程》1995年第3期37-41,46,共6页Ordnance Material Science and Engineering

摘　　要：研究了５０．８ｍｍ液封直拉非掺杂半绝缘砷化镓单晶中ＡＢ微缺陷的显微特征，率先提出了一种定量表征微缺陷的新方法，揭示了ＡＢ微缺陷在单晶各部位的分布规律。The microsopic characteristics of AB microdefects in50.8mm LEC undoped semi-insulating GaAs single crystals have been studied.A new method for the quantitative characterization of micro-defects is inaugurated for the first time to date ,and the regular pattern of the AB microdefect distribution of semi-insulating GaAs crystals is revealed.

关 键 词：微缺陷 砷化镓 单晶 半导体材料 定量分析 

分 类 号：TN304.23[电子电信—物理电子学]