非晶硅辐射探测器  

Amorphous Silicon Radiation Detector

作　　者：焦洪震[1] 

机构地区：[1]南京大学物理系

出　　处：《核物理动态》1995年第1期40-43,共4页

摘　　要：近年来，许多国家开展了用非晶硅（ａ－Ｓｉ：Ｈ）作为探测器材料的研究，并取得了明显的进展．本文简要介绍这种探测器的原理、结构、现状及其应用前景．Recently, the investigation to make radiation detectors with amorphous Silicon(a-Si:H) were reported in many countries of the world. In this paper, operation principles,structures, current status and prospect of applications in various fields of science on these detectors were reviewed briefly.

关 键 词：辐射探测器 非晶硅 

分 类 号：TL814[核科学技术—核技术及应用]