有机金属沉积法生长HgCdTe双色晶膜材料的研究  

DOUBLE WAVE BAND HgCdTe CKYSTAL LAYER GROWN BY MOCVD

作　　者：陈记安 刘克岳[1] 李贤春 赵振香[1] 

机构地区：[1]华北光电技术研究所

出　　处：《红外与激光技术》1995年第6期23-30,共8页

摘　　要：本文采用有机金属沉积（ＭＯＣＶＤ）法在ＣａＡｓ衬底上率先开展生长双色ＨｇＣｄＴｅ材料的研究，总结了生长ＣｄＴｅ缓冲层和隔离层、ｘ≈０．２、ｘ≈０．３的ＨｇＣｄＴｅ晶膜的工艺条件，并给出了ＨｇＣｄＴｅ双色材料的组分均匀性、厚度、表面形貌、结构和电性能。In this paper it is reported the pineering work of growing doublewaveband HgCdTe layer on the base of GaAs by MOCVD. The tech-niques of creating CdTe buffering and isolating areas and producing the HgCdTe crystal layer when x≈ 0.2 or x≈0.3 are discussed,and the specifications of mate-rial composition and its homogeneity,thickness,surface looking,structure,and electric characteristics are presented.

关 键 词：有机金属沉积法 HGCDTE 双色晶膜 红外探测器 

分 类 号：TN215[电子电信—物理电子学] TN304.054