端面反射率对半导体激光器单模工作性能的影响  

Effect of facet reflectivity on single-mode operation of semiconductor lasers

作　　者：吴正茂[1] 夏光琼[1] 陈建国[1] 卢玉村[1] 

机构地区：[1]四川大学光电系,西南师范大学物理系

出　　处：《激光技术》1995年第6期335-337,共3页Laser Technology

基　　金：国家教委留学回国人员基金

摘　　要：本文利用半导体激光器多模速率方程组的隐式解析解￣［１］，从理论上研究了端面反射率对半导体激光器单模工作性能的影响。结果表明，在相同的输出功率下（ｍＷ量级），端面反射率越低，单模工作性能越差，与Ｅｔｔｅｎｂｅｒｇ等人￣［２］通过实验研究所得的结论相同。Starting from the analytical solution of implicit fomation to multi-mode rate equation,this paper gave out the expressions of threshold current it. photon life T_p,photon density and output power of M_(th)mode,and defined MSR as the power logarithmic ratio of normal mode and submode. The thcoretical calculation shows that the lower the facet reflectlvity is,the smaller the parameter MSR(mode suppression ratio),namely,semiconductor can operate in single mede,only if the facet reflectivi-ty should be high enough.

关 键 词：半导体激光器 端面反射率 单模工作性能 

分 类 号：TN248.4[电子电信—物理电子学]