氧化限制型垂直腔面发射激光器串联电阻分析  

Analysis of Series Resistance of Oxide-Aperture Confined Vertical-Cavity Surface-Emitting Lasers

作　　者：佟存柱[1] 韩勤[1] 彭红玲[1] 牛智川[1] 吴荣汉[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2005年第7期1459-1463,共5页半导体学报（英文版）

基　　金：国家高技术研究发展计划(批准号:2002AA312080);国家重点基础研究发展规划(批准号:TG2000036603);国家自然科学基金(批准号:60137020)资助项目~~

摘　　要：含氧化限制孔的VCSEL具有低的阈值电流,但氧化孔的存在也会加大串联电阻.本文采用理论模型,详细计算了氧化限制型VCSEL的串联电阻.把串联电阻分解为垂直方向电阻和横向电阻,分析了串联电阻与氧化孔半径的关系,提出了降低VCSEL串联电阻的具体方法.While AlAs oxide confined aperture may reduce the threshold current of vertical-cavity surface emitting lasers （VCSELs）,it might also enlarge the series resistance of the VCSELs. In this paper,a theoretical model and calculation of series resistance of oxide confined VCSELs are presented. In the model, series resistance is split into two parts：the perpendicular part and the transverse part. Suggestions for reducing the series resistance of the VCSELs are given.

关 键 词：垂直腔面发射激光器 氧化孔 串联电阻 阈值电流 

分 类 号：TN248[电子电信—物理电子学]