增强型MOS变容管LCVCO增益建模  

Gain Modelling for A-MOS Varactor in CMOS LC VCOs

作　　者：王飞[1] 来金梅[1] 张海清[1] 孙承绶[1] 章倩苓[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海200433

出　　处：《计算机辅助设计与图形学学报》2005年第8期1813-1817,共5页Journal of Computer-Aided Design & Computer Graphics

基　　金：国家创新基金小额资助(03C26213100534)

摘　　要：研究分析了大信号振荡电压对变容管的调制效应,导出增强型变容管LCVCO增益解析模型.将该模型应用于Chartered0.35μmCMOS2P4MRF工艺实现的2.4GHzLCVCO设计中,spectreRF电路仿真得到的VCO增益曲线与模型预测的增益曲线吻合.In this paper, we study the large-signal modulation effect of accumulation-mode MOS （AMOS） varactor incorporated into the VCO tank circuit. A gain model is presented for A-MOS varactor in CMOS LC VCOs. Simulated results show good agreement with those obtained by spectreRF for an example 2.4 GHz LC VCO, which has used A-MOS varactors implemented in Chartered 0.35μm CMOS 2P4M RF technology.

关 键 词：LC VCO 增强型变容管 大信号分析 VCO增益 

分 类 号：TN752[电子电信—电路与系统]