高温高压合成含硼金刚石单晶制备工艺初探  

Preliminary Study on the Preparation of Synthetic Diamond Single Crystal with Boron at High Temperature and High Pressure

作　　者：李洪岩[1] 李木森[1] 宫建红[1] 郑克芳[1] 

机构地区：[1]山东大学材料科学与工程学院,山东济南250061

出　　处：《材料科学与工程学报》2005年第4期550-553,共4页Journal of Materials Science and Engineering

基　　金：国家自然科学的资助基金项目(50372035;50371048)

摘　　要：本文以掺入不同含量硼铁的铁基合金为触媒,以石墨为碳源,在高温高压条件下合成了含硼金刚石单晶体。利用扫描电镜(SEM)观察了金刚石及触媒的组织形貌;利用金相显微镜观察了金刚石颗粒的颜色和形态;利用拉曼光谱仪(RS)确认了人造金刚石单晶体中硼的存在;利用低温电阻测量仪验证了合成的含硼金刚石单晶颗粒具有半导体性能。实验结果表明,在金刚石的合成中,触媒中硼铁含量为2wt%的合成效果相对最好。This paper deals with the preparation of synthetic diamond single crystal with boron at high temperature and high pressure （HPHT） from Fe-Ni-C-B system. The microstructure and morphology of the specimens were observed by scanning electron microscopy （SEM）. The boron-doped diamond was approved by RS. The semiconductivity of synthetic diamond was also studied. The results showed that the synthetic effect of the catalyst containing 2wt% iron boride is relative best one。

关 键 词：半导体 金刚石 含硼触媒 人工合成 高温高压 

分 类 号：TQ163[化学工程—高温制品工业]