SiC紫外光电探测器高反压下增益性能的研究  

A Study on the Gain Performance of SiC Ultraviolet Photodetectors at High Reverse Biased Voltage

作　　者：黄莉敏[1] 谢家纯[1] 梁锦[1] 孙腾达[1] 

机构地区：[1]中国科学技术大学物理系,安徽合肥230026

出　　处：《微电子学》2005年第4期357-359,共3页Microelectronics

基　　金：国家自然科学基金资助项目(NSFC50132040);中科院创新项目资助(KJCX2SW04)

摘　　要：用宽禁带半导体n4HSiC和金属Au作肖特基接触,Ti、Ni、Ag合金作背底,形成欧姆接触,研制出Au/n4HSiC肖特基紫外探测器。文章测试并分析了器件在高压下的紫外光电响应的高增益特性,反压150V下,增益可达到3.8×104。在高反压下(100V以上),探测器的光谱响应曲线出现了锐上升和锐截止,在260～380nm之间,有非常平稳的光谱响应;在高温533K无偏压下,紫外响应特性仍然保持良好。Au/n-4 H-SiC Schottky ultraviolet photodetectors are fabricated using wide-band semiconductor n-4H-SiC and metal Au as Schottky contact and Ti,Ni, Ag alloys on the back side to form ohmic contact. The high gain of UV spectrum response of the device at high reverse biased voltage is measured and analyzed, which is about 3. 8 ×10^4 at 150 V reverse voltage. The spectrum response and cut-off velocity of the detector increase sharply at high reverse biased voltage （above 100 V）. And the spectrum response curves are very smooth between 260 nrn and 380 nm. At 533 K without biased voltage, UV response of the device remains very good.

关 键 词：宽带隙 碳化硅 肖特基接触 光谱响应 紫外探测器 

分 类 号：TN362[电子电信—物理电子学]