纳米级MOSFET多晶区量子修正解析模型  

Analytical Modeling of Quantum Effects in Poly-Gates of Nano-Scaled MOSFET’s

作　　者：章浩[1] 张大伟[2] 余志平[2] 田立林[2] 

机构地区：[1]清华大学电子工程系,北京100084 [2]清华大学微电子学研究所,北京100084

出　　处：《微电子学》2005年第4期390-393,399,共5页Microelectronics

基　　金：国家高技术研究发展(863)计划资助项目(2003AA1Z1370)

摘　　要：利用ISE8.0的DESSIS,对多晶区量子力学效应进行了摸拟。结果表明,纳米级MOSFET多晶区内的量子效应不可忽略,且它对器件特性的影响与多晶耗尽效应相反。从密度梯度模型,简化得到多晶区量子效应修正,并建立了多晶区内量子效应的集约模型。该模型与数值模拟结果吻合。Simulation of quantum effects in poly-gates is conducted using DESSIS in ISE 8. 0. It is demonstrated that the quantum effect in poly-gates is non-negligible in nano-scale MOSFET＇s, and its effect on device characteristics is opposite to the poly-depletion effect. A compact model with quantum corrections is derived on the basis of density gradient formulation, and its results agree well with numerical simulation.

关 键 词：集约模型 纳米级MOSFET 密度梯度模型 多晶耗尽效应 量子力学效应 

分 类 号：TN432[电子电信—微电子学与固体电子学]