InP基一镜斜置三镜腔型光电探测器理论分析及实验研究  

Theoretical Analyses and Experimental Investigations of InP-Based One-Mirror-Inclined Three-Mirror-Cavity Photodetector

作　　者：王琦[1] 黄辉[1] 王兴妍[1] 任爱光[1] 武鹏[1] 黄成 黄永清[1] 任晓敏[1] 

机构地区：[1]北京邮电大学光通信与光波技术教育部重点实验室

出　　处：《中国激光》2005年第8期1045-1049,共5页Chinese Journal of Lasers

基　　金：国家973计划(2003CB314901);国家863计划(2003AA312020;2003AA31g050);国家自然科学基金(90201035)资助项目。

摘　　要：介绍了一种新型长波长InP基一镜斜置三镜腔型(OMITMiC)光电探测器,并对其进行了数值模拟。介绍了该光电探测器的两项关键制备工艺。首先,利用动态掩膜湿法腐蚀技术,通过调节HCl∶HF∶CrO3腐蚀溶液的选择比,在与InP晶格匹配的In0.72Ga0.28As0.6P0.4外延层上制备出了不同倾角的楔形结构。其次,利用选择性湿法腐蚀技术,通过FeCl3∶H2O溶液对In0.53Ga0.47As牺牲层的腐蚀,制备出了具有InP/空气隙的高反射率分布式布拉格反射镜(DBR)。A novel long-wavelength InP-based one-mirror-inclined three-mirror-cavity （OMITMiC） photodetector is introduced. The computational simulations are given and two key fabrication processes of this OMITMiC photodetector are introduced. One is the fabrication of several vertical taper structures with different inclined angles on the In0.72Ga0.28As0.6P0. 4 epi-layers which are lattice-matched to InP substrate, that is realized by dynamic etch mask technique and adjusting the component ratio of HCl：HF：CrO3 solution. The other is that of high-reflectivity InP/air gap distributed Bragg reflectors （DBRs） , realized by the selective wet etching of In0.53Ga0. 47 As sacrificial layers with FeCl3： H2O solution. Those two processes have laid the firm foundation for the successful fabrication of the OMITMiC photodetectors。

关 键 词：光电子学 光电探测器 楔型结构 空气隙 

分 类 号：TN364.2[电子电信—物理电子学] TN929.11