溶胶凝胶法制备Ce^()3+掺杂纳米SiO_2材料光致发光研究  

Photoluminescence Studies of Nanometer Ce^(3+)-Doped SiO_2 Synthesized by Sol-Gel Method

作　　者：徐光青[1] 郑治祥[1] 汤文明[1] 刘君武[1] 吕珺[1] 王建民[1] 吴玉程[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,合肥230009

出　　处：《光学学报》2005年第8期1081-1086,共6页Acta Optica Sinica

基　　金：合肥工业大学中青年创新基金资助课题。

摘　　要：通过溶胶凝胶技术制备了掺杂Ce3+离子的纳米SiO2材料,并经较低温度下煅烧,研究其光致发光(PL)性能。X射线衍射(XRD)及透射电子显微镜(TEM)测试结果表明该纳米材料具有非晶态结构,颗粒尺寸为20~30nm。对其光致发光谱的测定显示:经450℃低温煅烧,未掺杂SiO2样品的光致发光谱明显为多峰的宽带结构,而微量Ce3+掺杂的样品在230nm激发下存在着唯一的一个很强的、主峰位于346nm左右的紫外发光峰,与未掺杂SiO2及Cu2+掺杂SiO2样品的比较表明该发光峰并非常见的Ce3+离子的d-f跃迁产生的特征发光带,而是起源于SiO2中的某种本征缺陷中心。通过不同煅烧温度以及不同Ce3+离子掺杂量对346nm发光峰强度的影响,讨论该发光峰起源可能的结构模型。Nanometer Ce^3＋-doped SiO2 was prepared by sol-gel method, and it is photoluminescent property was studied. The structure of samples was found to be amorphous with powder size between 20 and 30 nm determined by X-ray diffraction （XRD） and transmission electron microscope （TEM） techniques. The photoluminescence spectrum of the Ce^3＋-doped SiO2 annealed at 450 ℃ shows a very strong UV luminescence band at 346 nm under 230 nm excitation. A wide band with multipeaks was also observed under the excitation of 380 nm. Compared with the Cu^2＋ -doped and undoped silica a conclusion can be drawn that the UV luminescence band at 346 nm is originated from the natural defect of silica but not the characteristic luminescence of d-f transition of Ce^3＋ . Based on the relationship of 346 nm band emission intensity with the heat treatment temperature and the concentration of Ce^3＋ ions in SiO2,the structure model of the 346 nm band was discussed.

关 键 词：光学材料 Ce^3+掺杂SiO2 溶胶-凝胶技术 纳米SIO2 

分 类 号：TN304[电子电信—物理电子学]