Bi_4Ti_3O_(12)掺杂对(Bi_(1.5)Zn_(0.5))(Zn_(0.5)Nb_(1.5))O_7陶瓷结构与介电性能的影响  

Effect of Bi_4Ti_3O_(12) addition on microstructure and dielectric properties of (Bi_(1.5)Zn_(0.5))(Zn_(0.5)Nb_(1.5))O_7 ceramics

作　　者：周焕福[1] 黄金亮[1] 王茹玉[1] 李谦[1] 黄清伟[2] 

机构地区：[1]河南科技大学材料科学与工程学院,河南洛阳471003 [2]中科院上海硅酸盐研究所,上海200050

出　　处：《功能材料》2005年第8期1204-1206,共3页Journal of Functional Materials

基　　金：教育部留学归国人员科研基金资助项目(2003-14);河南省高校创新人才基金资助项目(2001-213)

摘　　要：研究了Bi4Ti3O12掺杂对(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7(BZN)陶瓷烧结特性、相结构和介电性能的影响。采用传统的固相反应法制备样品,X射线衍射技术分析相结构,SEM观察表面形貌。结果表明,Bi4Ti3O12掺杂能有效地促进烧结,提高介电常数ε,降低介电损耗tgδ,优化介电频率温度系数αε。1000℃烧结8%(摩尔分数)Bi4Ti3O12掺杂的BZN陶瓷具有较好的介电性能:ε=192,tgδ=4.21×10-4,αε=-3.37×10-4/℃。The effect of Bi4Ti3O12 addition on the sintering characteristic, microstructure and dielectric properties of （Bi1.5Zn0.5）（Zn0.5Nb1.5）O7 （BZN） ceramics was investigated. The samples were prepared by conventional ceramic processing technology. X-ray diffraction technique was used to analyze phase structure and SEM was used to observe the microstructure. The experimental results indicate that Bi4Ti3O12 addition can accelerate the densification rate of the material,improve the dielectric constant evalue of BZN ceramics, decrease the dielectric loss tgδ and optimize the dielectric coefficient of resonant frequency αε. The 8mol%-Bi4Ti3O12-doped BZN ceramics sintered at 1000℃ have the optimum dielectric properties：ε=192, tgδ=4.21×10^-4 and αε=-3.37×10^-4/℃.

关 键 词：BZN陶瓷 Bi4Ti3O12掺杂 烧结特性 显微结构 介电性能 

分 类 号：TH145[一般工业技术—材料科学与工程]