延迟击穿半导体开关二极管最佳参数确定  

Best parameters for delayed breakdown diode

作　　者：余稳[1] 谭述奇 张飞[3] 张义门[1] 孙晓玮[3] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071 [2]湖南油中王有限公司,湖南益阳413000 [3]中国科学院上海微系统与信息技术研究所

出　　处：《强激光与粒子束》2005年第7期1043-1046,共4页High Power Laser and Particle Beams

基　　金：国家863计划项目资助课题

摘　　要：分析了延迟击穿二极管(DBD,delayedbreakdowndiode)的物理机理。从该器件在负载上的输出脉冲幅度及上升时间两方面综合考虑,通过改变器件结构参数和物理参数(长度、面积、掺杂浓度、激励源等),模拟研究了不同激励源及不同负载情况下DBD特性的变化情况。结果表明:上升时间对于面积和负载电阻均存在极小值,设计时面积和负载电阻应该选取该极值点对应的最佳值。n区长度存在最佳值,理论上应为器件加载在所需临界击穿电压值而且刚好处于穿通状态时的长度值;p+区和n+区的长度没有太大的影响,但应稍大于各自的穿通长度,浓度则尽量高;n区掺杂浓度越低越好,对激励源要求电流稍高于临界条件即可。The physical mechanism of delayed breakdown diode（DBD） was analyzed. Considering both the amplitude and the rise time of the output pulse across the load, the characteristics of DBD with different structure parameters and physical parameters （length, area, doping and the stimulating source） were simulated. The simulation results show that there exists a minimum value for rise time with respect to both the area of the DBD and the load resistance. The minimum value should be adopted in design. Theoretically the optimum length of n region should be the maximum punching through length. The lengths of p＋ region and n＋ region have little influence on the DBD performance, which should be greater than their punching through lengths. And their doping density, the higher the better. As regard to the n region doping density, the lower the better. The current of the stimulating source should be a little bigger than that of the critical condition.

关 键 词：开关二极管 延迟击穿 脉冲锐化 脉冲功率器件 

分 类 号：TN313.6[电子电信—物理电子学] TN602