1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes  

作　　者：王定理 周宁 张军 刘宇 祝宁华 李林松 

机构地区：[1]Wuhan Accelink Technologies Co., Ltd, Wuhan Research Institute of Post & Telecommunication [2]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083

出　　处：《Chinese Optics Letters》2005年第8期466-468,共3页中国光学快报（英文版）

基　　金：This work was supported by the National "863" Pro-gram of China (No. 2002AA312171) and the National"973" Program of China (No. 2003CB314903)

摘　　要：In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well （MQW） ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide （RM-RWG） structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80℃, respectively.In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well （MQW） ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide （RM-RWG） structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80℃, respectively.

关 键 词：Optical communication Optical communication equipment Optical waveguides Polyimides Semiconducting indium gallium arsenide Semiconductor quantum wells 

分 类 号：TN365[电子电信—物理电子学]