新型PTCDA/p-Si光电探测器  

New Type PTCDA/p-Si Potodetector

作　　者：张福甲[1] 李东仓[1] 桂文明[1] 戴志平[1] 

机构地区：[1]兰州大学物理科学与技术学院,甘肃兰州730000

出　　处：《光电子．激光》2005年第8期897-900,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60276026);甘肃省自然科学基金资助项目(ZS031-A25-012-G)

摘　　要：研制成功的PTCDA/p-Si新型光电探测器与型号为PHD714的PIN光电二极管的电参数进行了测试对比.结果表明,两者的光谱响应范围均为450～1 100 nm,峰值波长为930 nm,对光的响应速度均小于10-9 s;在1 000 Lx及1.5 V电压作用下,前者的光电流普遍大于100 μA,后者光电流小于100 μA,前者经高温(120 ℃)48 h及低温(-80 ℃)12 h 2次循环实验后测得其电参数稳定.表明,这种新型有机/无机光电探测器具有更优良的光敏性及可靠性.We measured the electronic parameters of the fabricated PTCDA/p-Si new type photodetectors and PIN photoelectric diodes with model PHD 714 made by the South Korea, and compared them with each other. Results show that spectral responsivities of the two types of diodes both range from 450 nm to 1100 nm with the peak wavelength of 930 nm and the response speed for light is less than 10^-9 s. At the voltage of 1000 Lx and 1.5 V the photo current of the former is usually larger than 100μA,while that of the latter is less than 100μA. Moreover at the high temperature （120℃） for 48 h and the low temperature （-80℃） for 12 h,we measured the parameters of the photodector circularly,which show that the new type of organic/inorganic photodetector has better photosensitive and better reliabiity.

关 键 词：光电探测器 电参数 对比 

分 类 号：TN362[电子电信—物理电子学]