中频溅射技术制备镱铒共掺Al_2O_3光波导  

Yb^(3+)/Er^(3+) co-doped Al_2O_3 optical waveguide fabricated by middle frequency sputter

作　　者：宋琦[1] 宋昌烈[1] 高景生[1] 李成仁[1] 李淑凤[1] 李建勇[1] 李国卿[1] 

机构地区：[1]大连理工大学物理系,大连116024

出　　处：《激光技术》2005年第4期440-442,445,共4页Laser Technology

基　　金：国家自然科学基金资助项目(69889701);辽宁省科技厅基金资助项目(20022110);辽宁省教育厅基金资助项目(202123198)

摘　　要：在硅单晶(100)衬底上用热氧化法氧化一层SiO2做缓冲层,在高纯铝靶上镶嵌金属Yb,Er,然后用中频磁控溅射法制备了镱铒共掺杂氧化铝薄膜。讨论了靶电压及沉积速率随氧流量的变化的磁滞回线效应,分析得出了沉积氧化物薄膜的最佳氧流量。在室温下检测到了薄膜的位于1535nm的很强的光致发光光谱(PL),并在光学掩模下用BCl3离子束对薄膜样品进行刻蚀,得到条形光波导。SiO2 is formed on the monocrystalline silicon（100） substrate by means of high temporatare oxidation,then Yb and Er are embeded in highly pure aluminum, and Yb, Er-co-dopod Al2O3 film is produced with middle frequeney sputter technique. The influence of target voltage and deposit rate varying with oxygen flow is discussed， The optimized oxygen flow of deposite oxide film is presented，A strong photolumineseence at 1535nm is detected at the room temperature，Optical film is carved by BCl3 ion beam under optical mask to form square optical waveguide。

关 键 词：中频溅射 镱铒共掺 光致发光光谱 光波导 

分 类 号：TN252[电子电信—物理电子学]